c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . w w w w bn13003a1 bn13003a1 bn13003a1 bn13003a1 rev.a jun .201 1 high voltage fast-switching npn power transistor features ? very high switching speed ? high voltage capability ? wide reverse bias soa general description this device is designed for high voltage , high speed switching characteristics required such as lighting system,switching mode power supply. absolute maximum ratings symbol parameter test conditions value units v ces collector-emitter voltage v be =0 6 00 v v ceo collector-emitter voltage i b =0 400 v v ebo emitter -base voltage i c =0 9.0 v i c collector current 1. 2 a i cp collector pulse current 2.4 a i b base current 0.75 a i bm base peak current t p =5ms 1.5 a p c total dissipation at tc=25 18 w t j operation junction temperature -40~150 t stg storage temperature -40~150 thermal characteristics symbol parameter value units r qj c thermal resistance junction to case 6.9 /w r qja thermal resistance junction to ambient 89
w w w w bn13003a1 bn13003a1 bn13003a1 bn13003a1 2 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics (tc=25 unless otherwise noted) note: pulse test : pulse width 300,duty cycle 2% s y mbo l p a r a m e t e r t es t c on d i t i o n s v al u e u ni ts m i n t y p m a x b v c bo c o lle c t o r- b a s e b rea k do w n v ol t ag e i c = 10 m a , i e = 0 60 0 v b v c eo c o lle c t o r- b a s e b rea k do w n v ol t ag e i c = 10m a ,i b = 0 4 0 0 - - v v c e( s a t ) c o lle c t o r- e mi tt e r s a t ura t io n v ol t ag e i c = 5 00m a , i b = 100m a - - 0.8 v v be( s a t ) b a s e- e m i tt e r s a t ur a t i o n v ol t ag e i c = 5 00m a , i b = 100m a - - 1 . 2 v i c bo c o lle c t o r- b a s e c u t o f f c u rr e n t v c b = 6 00 v , i e = 0m a - - 5 a i c eo c o lle c t o r- e mi tt e r c u t o f f c u rren t v c e = 400 v , i b = 0m a - - 10 a i ebo e mi t t er - b a se c u t o f f c u rren t v e b = 9 v , i c = 0m a - - 5 a h f e d c c u rre n t g ai n v c e = 20 v,i c= 20 m a v c e = 5 v , i c = 1 m a 10 9 - - 40 - t s t f s t o rag e t im e f a l l t im e vcc=24v i c = 5i b i b1 =-i b 2=0.05a - - - - 4 0.7 ? f t characteristic frequency v ce =10v,i c =0.1a 4 - - mhz
w w w w bn13003a1 bn13003a1 bn13003a1 bn13003a1 3 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 dc current gain fig.2 saturation voltage fig.3 switching time fig.4 safe operation area fig.6 power derating
w w w w bn13003a1 bn13003a1 bn13003a1 bn13003a1 4 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance resistive load switching test circuit inductive load switching& rbsoa test circuit
w w w w bn13003a1 bn13003a1 bn13003a1 bn13003a1 5 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to-92 to-92 to-92 to-92 package package package package dimension dimension dimension dimension unit :mm
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